This project is aiming to propose new methodologies and test methods for wafer bond energy analysis.
Wafer-bonding energy
Partner Call open until: July 30, 2024
Project Start: Q3 2024
Characterization of bonded wafers is a critical step in semiconductor manufacturing, with bond strength being the most reliable indicator of wafer bonding quality. Various methods have been investigated to quantify bond energy, of which the double cleavage beam (DCB) technique, also known as the crack opening method or razor blade method, is one of the most commonly used. In this project, the bond energy of wafers will be evaluated and quantified using new destructive and non-destructive testing methods.
The main tasks are:
- Characterization of wafer bond strength to optimize direct and indirect wafer bonding processes
- Demonstration of state-of-the-art destructive and non-destructive bond energy analysis methods
- Simulation and modeling of wafer bond energy and its dependence on wafer bonding parameters such as surface treatment, annealing conditions, etc.
Expected results
- Wafer Bond Energy Quantification
- Development of alternative bond energy evaluation technologies
- Understanding the effects of wafer bond parameters on bonded wafer strength
