SICSPEC

Partner Call open until: November 5, 2024

Project Start: Q1 2025

Understanding defects in SiC is relevant during fabrication of integrated SiC-based devices and also because of their potential use as quantum-elements for quantum technology applications.

The best method to univocally identify such defects is fluorescence spectroscopy at cryogenic temperatures. Within this project, such a set-up shall be installed, and corresponding measurements shall be performed.

• Florescence measurements on SiC samples with laser excitation
• Integration of a closed-cycle He-cryostat in the set-up and measurements at 4K

• We expect to retrieve high quality low temperature spectra, which will allow the identification of defects ins SiC and other semiconductors.