Development of a time-to-failure model for Power-Metal-Oxide-Silicon transistors and verification via Highly Accelerated Stress Testing (HAST) under full electrical load.
PowerMOS-HAST
Partner Call open until: November 7, 2024
Project Start: Q4 2024
- Development of parallel operating electronic signal monitoring circuits for long-term HAST and online electronic detection systems for PowerMOS performance degradation.
- Modelling and simulating of uncovered degradation processes.
- Implement predictive models to estimate the remaining useful life under environmental conditions.
Expected results
- A validated model for lifetime prediction of PowerMOS
- Improved design and layer stack for fabrication
- Longer operating life of power components
