Next Gen TSV

The project focuses on the development of TSV wafer integration processes such as temporary bonding, via filling, thinning and debonding – specifically tailored for advanced sensor/sensing solutions.
Stockfoto eines Wafers

2.5 and 3D integration using through-silicon via (TSV) wafers has attracted much attention in recent years for both front-end foundries and back-end packaging. In this project, SAL and project partner ams-OSRAM AG will focus on the development of TSV wafer integration processes such as temporary bonding, via filling, thinning and debonding – specifically tailored for advanced sensor/sensing solutions. The selection of bonding and filling technologies as well as materials compatible with the TSV processing temperature is a part of this project. The assessment will cover simulation, wafer processing in the cleanroom environment as well as a reliability analysis.  

Project Objectives:

  • Establishing processes for TSV fabrication, protection, integration, and handling
  • Proposing via filling approaches after TSV processing
  • Adapting temporary bonding technologies for high-yield TSV handling

Project facts

  • Project name: Next Gen TSV – Next generation of through-silicon via (TSV)
  • Project lead: Ali Roshanghias
  • Project consortium: SAL, ams-OSRAM AG
  • Duration: July 2023 – June 2026

Your contact person

Porträt Ali Roshanghias

Dr. Ali Roshanghias

Head of Research Unit | Heterogeneous Integration Technologies

e-mail: contact@silicon-austria.com

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