The main task is to develop the following etching processes of AlGaN/AlN structures:
- AlGaN ALE;
- MD and CFD ALE process model definition and verification.
ALEGAN
Partner Call offen bis: 10. Februar 2025
Projektstart: Q1 2025
The main objective of the project is to develop AlGaN and AlN Atomic Layer Etching Processes and to demonstrate the low/controlled plasma damage etch performance on HEMT devices on 200mm wafers. The work packages breakdown structure and scope of work are as follows:
- AlGaN ALE development
- Materials and process simulation
- Ab-initio simulations
- Kinetic Monte Carlo
- Molecular Dynamics
Expected results
- AlGaN ALE process in spec on 200mm
- OMD and CFD process model defined
