Talk: mm-Wave Ultra-Low-Power Wire­less Sensing

On Oct. 11th Dr. Hao Gao (Eind­hoven Univer­sity of Tech­no­logy) was invited to talk about the highly inno­va­tive topic of mm-Wave Ultra-Low-Power Wire­less Sensing at JKU Linz. In parti­cular, he focused on mm-Wave trans­ceiver capa­bi­lites to guarantee power auto­no­mous sensor nodes. The talk was jointly orga­nized by Silicon Austria Labs, JKU Linz and IEEE Austria CAS/​SSC Joint Chapter.

Sensor nodes auto­no­mous from power-supply

Milli­meter-Wave (mm-wave) wire­less commu­ni­ca­tion provides several GHz ISM band­width using high data rate commu­ni­ca­tion in short bursts with high duty-cycle for lowest power systems. Combined with an on-chip wire­less power recei­ving tech­nique, an on-chip antenna, a fully inte­grated mono­li­thic passive mm-wave sensor node for internet of things (IoT) can be realized. Such a sensor node is auto­no­mous from an external power-supply, as well it can sense the envi­ron­ment, receive commands and transfer the sensing infor­ma­tion.

How to over­come the bott­leneck of power consump­tion for mm-wave circuits

In order to over­come the chal­lenge of the power consump­tion of mm-wave circuits for achie­ving mono­li­thic passive sensor nodes, Hao Gao focuses on trans­ceiver archi­tec­tures and RF circuit tech­ni­ques. He espe­cially pointed out the demand of smart circuit solu­tions to enable power-auto­no­mous wire­less systems for IoT appli­ca­tions focu­sing on the harvester circuits and receiver archi­tec­tures and imple­men­ta­tions employing inte­grated antennas for 60GHz wire­less opera­tion for smal­lest possible sensor nodes.

Bio of Hao Gao

Dr. Ir. Hao Gao received the B.Eng degree from Southeast Univer­sity, China, the M.Sc. degree from Delft Univer­sity of Tech­no­logy, and the Ph.D. degree from Eind­hoven Univer­sity of Tech­no­logy. Since 2016 he is a consul­tant in RF/​mm-IC for NXP Semi­con­duc­tors and since 2015 he is assis­tant professor at the Eind­hoven Univer­sity of Tech­no­logy at the Depart­ment of Electrical Engi­nee­ring & Mixed-signal Micro­elec­tro­nics. From 2008 to 2012 he did a re­search project in Philips Global Re­search Head­quarter, Eind­hoven. In 2012 he was a Euro­pean Marie Curie Rese­ar­cher in NXP Semi­con­duc­tors, Sweden. Dr. Gao was not only awarded with several scho­lar­ships & grants (Philips Semi­con­ductor Scho­lar­ship, ISSCC 2015 Distin­gu­ished Tech­nical Paper, etc.), he also published more than 60 papers in the most renowned jour­nals and gave high-quality cont­ri­bu­tions at several expert symposia & confe­rences.